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Three Chambers cluster tool configured for processing 200mm wafers:
•CH-A: dual frequency lamp heated TEOS, oxide deposition chamber, doped and undoped, plasma enhanced with RF generator 350-450C range
•CH-B: DxZ Nitride, DxZ style chamber, Nitride and silicon deposition typically 250-480 C deposition, plasma enhanced with Compact 2KW RF generator
•CH-C: SiC, DxZ chamber, Silicon carbide and carbon deposition chamber, 250-480C range, plasma enhanced with compact 2KW RF generator
•Gas panel: P5000 gas panel with TEOS hot box
•Remote rack; AC remote rack with AMAT 1 style heat exchanger, 65C heat range
•vacuum pumps (4) CH-A, CH-B, CH-C and load-lock
For additional photos, please refer to our website:
www.photonicmicrodevices.com
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