This system etches micron-scale patterns into silicon. The patterns are typically defined by a thin layer of silicon oxide which is patterned lithographically prior to etching.
Silicon is etched selectively relative to the oxide mask.
Load-locked ICP system is optimized for high etch rate and high aspect ratio etching of silicon.
Vertical anisotropic deep plasma etching of silicon can be generally achieved by using two types of processes:
In the cryogenic process regime, an ultra-thin layer of silicon-dioxide is used for sidewall protection to control the mask undercut.
In the room temperature process regime, thin fluoro-carbon polymer film is used for sidewall protection to control the mask undercut (patented Bosch process).
Company: Access Capital Equipment, LLC Contact Name: Tracy Cinfici
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