STS Reactive Ion Etcher

Posted by:

spectrum

Location:

Pennsylvania

Ad Status:

Closed

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Description:

The Multiplex range of plasma systems combine a single wafer or batch vacuum loadlock with STS etch plasma source to produce a platform of unrivalled quality and reliability for both R&D and pilot-production applications.

SYSTEM DESCRIPTION:
Surface Technology Systems Multiplex Reactive Ion Etcher (RIE) designed for etching of 3-8 inch GaAs wafers. Systems includes Multiplex Atmospheric MACS wafer handling, Loadlock, PC-controlled RIE process chamber, Power distribution cabinet, RF rack, remote gas box, and chiller.

STS Multiplex RIE System configured as follows:

Wafer Loader
Multiplex Atmospheric Cassette System (MACS) for automated wafer loading (2 cassettes); can run in automatic mode (cassette-to-cassette) or manual mode (manual wafer load)

Load Lock System
Wafer size from 3 inch to 8 inch (75mm to 200mm) capable; Wafer set size = 6 inch (150mm); requires Leybold Ecodry L rotary pump or equivalent (not included).

RIE Process Module
MESC RIE SC100M process chamber; version 1.0; PC controlled; Intellimetrics end-point detector (EPD) sn300.110+sn300.002+sn300.001+frame grabber; Electrode temperature control (+5 to +40 deg C); non-clamped electrode; ENI ACG3B 300/30 watt (13.56MHz) RF supply & matching unit; Remote gasbox; requires Leybold Dryvac 50S dry pump or equivalent (not included)

Electrode Cooling
Bettatech CU500 chiller (DI water +5 to +40 deg C)

Gasbox
Remote R/H (standard - inc 2x PFC1 module); (1) O2=100sccm; (2) Ar=100sccm; (3) CF4=200sccm; (4) CHF3=200sccm.

Cleanroom Panels
MMplex Midi cleanroom panel: loadlock with EMO = operator panel with keyboard touchscreen lights & buzzer; Additional panel for EPD (incl 18" TFT monitor.