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Serial number DIDC2-00803 Deinstalled, barrier bagged, warehoused in Avezzano, Italy CX1000 controllers, Edwards DP80/EH1200 Pumps, Load station,DK421 Soft landing option Vacuum Annealing process ( Upper 2 tubes) 150 mm wafers, 100 wafer load 700-800 celcius growth temperature Max temp. 800 celcius operational temperature range 580-780 celcius Flat zone 600 mm at 750 celcius Attainable pressure 0.67 Pa Operating pressure 26-133 Pa High temperature Oxidation process ( Bottom 2 tubes) Film: SiO2 50 wafers , 150 mm load Process gases: SiH4, N2O Growth temperature: 750 to 850 celcius Film thickness distribution +/- 8% across wafer, wafer to wafer, batch to batch. Refractive Index 1.44 to 1.47 Max. temperature 850 celcius Working temperature 750 to 850 celcius Flat zone length 800 mm at 800 celcius Attainable pressure 0.67 Pa Working pressure 67-400 Pa Power consumption:- 208V 3 phase 75KVA heater 208V 3 phase 32 KVA pumps and fans 100V 1 phase 2 KVA controllers
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:581/0
